104MHz needs a latency of 8 clock cycles and the VHF
flag must be set. Also t_rdyo is specified as
"not applicable" so pick a lower value, and force at
least 1 clk between AVD High to OE Low.
Signed-off-by: Adrian Hunter <adrian.hunter@nokia.com>
Signed-off-by: Tony Lindgren <tony@atomide.com>
Adrian Hunterauthored and Tony Lindgrencommited 2011-02-17 15:44:45 -08:00
Add support for multiblock erase command. OneNANDs (excluding Flex-OneNAND)
are capable of simultaneous erase of up to 64 eraseblocks which is much faster.
This changes the erase requests for regions covering multiple eraseblocks
to be performed using multiblock erase.
Signed-off-by: Mika Korhonen <ext-mika.2.korhonen@nokia.com>
Reviewed-by: Adrian Hunter <adrian.hunter@nokia.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Mika Korhonenauthored and David Woodhousecommited 2009-11-30 09:43:18 +00:00
Define ECC status for 4-bit ECC status
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Artem Bityutskiy <Artem.Bityutskiy@nokia.com>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Kyungmin Parkauthored and David Woodhousecommited 2009-09-04 09:30:39 +01:00
Add support for Samsung Flex-OneNAND devices.
Flex-OneNAND combines SLC and MLC technologies into a single device.
SLC area provides increased reliability and speed, suitable for storing
code such as bootloader, kernel and root file system. MLC area
provides high density and is suitable for storing user data.
SLC and MLC regions can be configured through kernel parameter.
[akpm@linux-foundation.org: export flexoand_region and onenand_addr]
Signed-off-by: Rohit Hagargundgi <h.rohit@samsung.com>
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Cc: Vishak G <vishak.g@samsung.com>
Signed-off-by: Andrew Morton <akpm@linux-foundation.org>
Signed-off-by: David Woodhouse <David.Woodhouse@intel.com>
Rohit Hagargundgiauthored and David Woodhousecommited 2009-06-05 18:59:21 +01:00
The 2X Program is an extension of Program Operation.
Since the device is equipped with two DataRAMs, and two-plane NAND Flash
memory array, these two component enables simultaneous program of 4KiB.
Plane1 has only even blocks such as block0, block2, block4 while Plane2
has only odd blocks such as block1, block3, block5.
So MTD regards it as 4KiB page size and 256KiB block size
Now the following chips support it. (KFXXX16Q2M)
Demux: KFG2G16Q2M, KFH4G16Q2M, KFW8G16Q2M,
Mux: KFM2G16Q2M, KFN4G16Q2M,
And more recent chips
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
Kyungmin Parkauthored and David Woodhousecommited 2007-06-30 08:24:57 +01:00
OneNAND lock scheme depends on density and process of chip.
Some OneNAND chips support all block unlock
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: David Woodhouse <dwmw2@infradead.org>
Kyungmin Parkauthored and David Woodhousecommited 2006-09-26 16:46:28 +01:00
One Block of the NAND Flash Array memory is reserved as
a One-Time Programmable Block memory area.
Also, 1st Block of NAND Flash Array can be used as OTP.
The OTP block can be read, programmed and locked using the same
operations as any other NAND Flash Array memory block.
OTP block cannot be erased.
OTP block is fully-guaranteed to be a valid block.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Kyungmin Parkauthored and Jarkko Lavinencommited 2006-05-12 15:35:50 +01:00
Add OneNAND Sync. Burst Read support
Tested with OMAP platform
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Kyungmin Parkauthored and Thomas Gleixnercommited 2005-11-06 21:19:37 +01:00
OneNAND is a new flash technology from Samsung with integrated SRAM
buffers and logic interface.
Signed-off-by: Kyungmin Park <kyungmin.park@samsung.com>
Signed-off-by: Thomas Gleixner <tglx@linutronix.de>
Kyungmin Parkauthored and Thomas Gleixnercommited 2005-11-06 21:17:24 +01:00
Adrian Hunter
authored and
Tony Lindgren
commited 
Mika Korhonen
authored and
David Woodhouse
commited 
Kyungmin Park
authored and
Rohit Hagargundgi
authored and
Adrian Hunter
authored and
Kyungmin Park
commited 
David Woodhouse
commited 
Jarkko Lavinen
commited 
Thomas Gleixner
commited